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| Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF110S.22 3.5 A /100 Volts / 0.6 N-Channel MOSFET Transistor Features: * Rugged Construction with Polysilcon Gate * Small Footprint Hermetic Surface Mount Device with Excellent Thermal Properties * Replacement/Enhancement for 2N6782 * TX, TXV, S-Level Screening Available * Very Fast Switching Characteristics DESIGNER'S DATA SHEET SMD.22 Maximum Ratings Drain - Source Voltage Drain - Gate Voltage Gate - Source Voltage Continuous Drain Current Power Dissipation @ TC = 25C Power Dissipation @ TA = 25C Operating & Storage Temperature Maximum Thermal Resistance Junction to Case and to Ambient Note1: Derated 60.6 mW/C above TC= 25C Note2: Derated 6.4 mW/C above TA= 25C Symbol VDS VDG VGS @ TC = 25C @ TC = 100C Note 1 Note 2 Value 100 100 +/-20 3.5 2.25 16.5 0.8 -55 to +150 7.5 (typ 5) 156.5 Units Volts Volts Volts Amps W C C/W ID1 ID2 PD Top & Tstg RJC RJA PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE .220.007 .065.010 3 .134 .030 1 2 .140 .150 .007 .052 .070 .090 .005 TYP NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0015A DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF110S.22 Symbol VGS = 0 V; ID = 1 mA BVDSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 RDS(on)1 RDS(on)2 Electrical Characteristics 4/ Drain - Source Breakdown Voltage Gate - Source Threshold Voltage Gate Leakage Current Drain Leakage Current Static Drain - Source On-State Resistance Min 100 2.0 -- -- -- -- -- -- -- -- Typ -- 3.0 2.0 4.0 5 10 0.02 5 0.55 0.58 Max -- 4.0 -- -- 100 -- 25 -- 0.60 0.61 Units Volts VDS = 4 V; ID = 0.25 mA VDS =4V; ID= 0.25mA; TA = 125C VDS =5V; ID= 0.25mA; TA = -55C VGS = +/- 20 V VGS = +/- 20 V, TA= 125C VGS = 0 V; VDS = 80 V VGS = 0V; VDS = 80 V, TA = 125C VGS = 10 V, ID = 2.25 A VGS = 10 V, ID = 3.50 A Volts nA A Ohm VGS= 10V, ID = 2.25A, TA = 125C Forward Voltage of the Source - Drain Diode Switching Time Test: Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Charge Test: On-State Gate Charge Gate - Source Charge Gate - Drain Charge Reverse Recovery Time Capacitance Test: Input Capacitance Output Capacitance Reverse Transfer Cap. ID = 3.5 A RDS(on)3 VSD td(on) tr td(off) tf Qg(on) Qgs Qgd trr Ciss Coss Crss -- -- -- -- -- -- -- -- -- -- -- -- -- 1.05 1.2 -- -- -- -- -- -- -- -- 180 85 15 -- 1.5 15 25 25 20 6.55 1.61 3.46 180 -- -- -- Volts ID = 3.5 A, VGS = 10 V, RG = 7.5 ohm, VDD = 50 V ns VGS= 10 V, VDS= 50 V VDD= 50V, ID = 3.5 A, dI/dt= 100 A/s VGS= 0 V, VDS= 25 V, f = 1MHz nC ns pF NOTES: * Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2% 1/ For Ordering Information, Price, Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0015A DOC |
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